66% CW wallplug efficiency from Al-free 0.98 µm-emittingdiode lasers
- 10 October 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (21) , 2012-2013
- https://doi.org/10.1049/el:19961300
Abstract
0.98 µm-emitting, broad-waveguide-type InGaAs/InGaP/GaAs diode lasers have been optimised for maximum wallplug efficiency. Optimised-facet-coated, 100 µm-widestripe, 500 µm-long devices having InGaAsP optical-waveguide thicknesses of 0.6 and 1.2 µm provide maximum wallplug efficiencies of 66% and 62%, respectively. Carbon-doped cap layers allow for a series resistance of 0.08 Ω for devices with 100 × 500 µm2 contact area.Keywords
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