Influence of finite semiconductor thickness on thin film transistor characteristics
- 1 June 1975
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 27 (2) , 273-286
- https://doi.org/10.1016/0040-6090(75)90034-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Theoretical influence of surface states and bulk traps on thin film transistor characteristicsSolid-State Electronics, 1975
- Role of incompletely ionized donors as bulk traps in thin film transistorsThin Solid Films, 1974
- Effective mobility and bulk trapping in heavily doped CdSeSolid-State Electronics, 1973
- Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistorsSolid-State Electronics, 1966