Ultrafast optical evidence for resonant electron capture in quantum wells
- 15 April 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (16) , 10951-10954
- https://doi.org/10.1103/physrevb.47.10951
Abstract
The dynamics of carrier capture in GaAs quantum wells have been measured with femtosecond resolution using pump and probe experiments under resonant excitation conditions. The electron capture mechanism at room temperature shows a resonance with a time as short as 650 fs for a well thickness of 58 Å. This gives strong evidence for the importance of the quantum-mechanical LO-phonon-assisted capture mechanism predicted by theoretical calculations.Keywords
This publication has 12 references indexed in Scilit:
- Carrier capture into a semiconductor quantum wellPhysical Review B, 1993
- Carrier capture times in 1.5 μm multiple quantum well optical amplifiersApplied Physics Letters, 1992
- Capture of photoexcited carriers in a single quantum well with different confinement structuresIEEE Journal of Quantum Electronics, 1991
- Subpicosecond luminescence study of carrier transfer in InGaAs/InP multiple quantum wellsSuperlattices and Microstructures, 1990
- Well-width dependence of photoluminescence excitation spectra in GaAs-As quantum wellsPhysical Review B, 1990
- Model calculations of diffusion limited trapping dynamics in quantum well laser structuresApplied Physics A, 1989
- Dynamics of carrier capture in an InGaAs/GaAs quantum well trapApplied Physics Letters, 1989
- Capture of electrons and holes in quantum wellsApplied Physics Letters, 1988
- Effective-mass eigenfunctions in superlattices and their role in well-captureSuperlattices and Microstructures, 1986
- Resonant carrier capture by semiconductor quantum wellsPhysical Review B, 1986