TRAPPING MODEL FOR InSb THIN FILMS
- 15 April 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (8) , 319-321
- https://doi.org/10.1063/1.1653678
Abstract
A deep trapping level related to defects is postulated from drift‐ and Hall‐mobility data taken from thin films of InSb on SiO‐coated LiNbO3 substrates.Keywords
This publication has 4 references indexed in Scilit:
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- Galvanomagnetic properties of recrystallized dendritic InSb filmsSolid-State Electronics, 1966
- Elastic Wave Propagation in Piezoelectric SemiconductorsJournal of Applied Physics, 1962
- Effects of Dislocations on Mobilities in SemiconductorsPhysical Review B, 1952