Si(111) 2×1 surface core-level shifts investigated by use of Ge overlayer

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Abstract
The Si 2p core level and the valence band from the clean Si(111) 2×1 surface both before and after the room-temperature deposition of Ge have been studied with high-resolution photoemission spectroscopy. We find that the deposition of 5 Å of Ge onto the Si(111) 2×1 surface fully quenches the surface-shifted components of the Si 2p spectra. By obtaining the Si 2p core-level line shape from the Ge-covered surface, we ascertain that the surface-sensitive Si(111) 2×1 2p core level consists of at least four components, one of which was previously unresolved. These components are attributed to different atoms in the 2×1 π-bonded chain structure.