Temperature dependence of band gaps in HgCdTe and other semiconductors
- 1 September 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (9) , 1121-1125
- https://doi.org/10.1007/bf02653063
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Temperature dependence of the direct band gap of As (x=0.06 and 0.15)Physical Review B, 1991
- Temperature dependence of the InP band gap from a photoluminescence studyPhysical Review B, 1991
- Thermal expansion contributions to band gap and band offset temperature dependenciesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- The temperature dependence of the band gaps in InP, InAs, InSb, and GaSbSolid State Communications, 1991
- A First-Principle Calculation of the Temperature Dependence of the Indirect Band Gap of SiliconEurophysics Letters, 1989
- Interband critical points of GaAs and their temperature dependencePhysical Review B, 1987
- Temperature dependence of the shifts and broadenings of the critical points in GaAsPhysical Review B, 1987
- Temperature dependence of the direct gap of Si and GePhysical Review B, 1983
- Theory of the temperature dependence of electronic band structuresJournal of Physics C: Solid State Physics, 1976
- Effect of electron-hole pairs on phonon frequencies in Si related to temperature dependence of band gapsPhysical Review B, 1976