Channeled-substrate-planar-structure semiconductor lasers with lateral-evanescent-field distributed feedback
- 1 August 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (8) , 5165-5167
- https://doi.org/10.1063/1.326652
Abstract
GaAs‐AlxGa1−xAs channeled‐substrate‐planar‐structure lasers with lateral‐evanescent‐field distributed feedback are fabricated by using one‐step liquid‐phase epitaxy. The diodes operate stably in single‐transverse (fundamental) and longitudinal modes at room temperature under pulsed operation.This publication has 7 references indexed in Scilit:
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