Temperature- and illumination-dependence of the work function of gallium arsenide
- 31 March 1972
- journal article
- Published by Elsevier in Surface Science
- Vol. 30 (1) , 185-206
- https://doi.org/10.1016/0039-6028(72)90032-5
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Electronic properties of clean cleaved {110} GaAs surfacesSurface Science, 1971
- Effect of Temperature on the Work-Function Minimum of Cesiated Tungsten SurfacesJournal of Applied Physics, 1969
- Temperature Coefficients of the Work Functions of the (110) and (100) Surfaces of Tungsten Single Crystals and of Polycrystalline Tungsten FoilJournal of Applied Physics, 1969
- Influence of Additional Illumination on the Photoemission from n‐ and p‐Type Gallium Arsenide Single CrystalsPhysica Status Solidi (b), 1969
- Giant Temperature Dependence of the Work Function of Cesium-Covered GaAsPhysical Review Letters, 1968
- Influence of volume dope on Fermi level position at gallium arsenide surfacesSurface Science, 1967
- Surface Properties of II-VI CompoundsPhysical Review B, 1967
- Photoelectric Properties of Cleaved GaAs, GaSb, InAs, and InSb Surfaces; Comparison with Si and GePhysical Review B, 1965
- Combined Measurements of Field Effect, Surface Photo-Voltage and PhotoconductivityBell System Technical Journal, 1956
- Surface Properties of GermaniumBell System Technical Journal, 1953