Electrical and optical identification of the persistent acceptor as copper in ZnTe
- 31 May 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 30 (5) , 259-263
- https://doi.org/10.1016/0038-1098(79)90073-5
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Band parameters for zinc telluride from bound exciton and donor-acceptor pair excitation luminescenceJournal of Physics C: Solid State Physics, 1978
- Sum rule for the intraband absorption and the oscillator strengths of the optical transitions in the shallow acceptor impurities in germaniumSolid State Communications, 1978
- The nature of the predominant acceptors in high quality zinc tellurideJournal of Luminescence, 1978
- Admittance spectroscopy of impurity levels in Schottky barriersJournal of Applied Physics, 1975
- Cubic contributions to the spherical model of shallow acceptor statesPhysical Review B, 1974
- Spherical Model of Shallow Acceptor States in SemiconductorsPhysical Review B, 1973
- Copper and native defects in zinc tellurideJournal of Physics and Chemistry of Solids, 1973
- Carrier Mobility and Shallow Impurity States in ZnSe and ZnTePhysical Review B, 1963