Strain relaxation and mosaic structure in relaxed SiGe layers
- 28 June 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (26) , 3464-3466
- https://doi.org/10.1063/1.109021
Abstract
We report high-resolution x-ray diffraction measurements of relaxed Si0.7Ge0.3 layers on (001) Si substrates. Strain was relieved either by a glide-limited mechanism in structures where the composition was changed abruptly or by a nucleation-limited mechanism in structures having a compositionally graded intermediate layer. We find that the broadening of the x-ray peak of the surface alloy layer is similar in both cases, although the threading dislocation densities ranged from 1011 cm−2 to 5×106 cm−2. The effect of the threading dislocations on the x-ray peak widths is masked by the mosaic structure caused by the network of misfit dislocations underneath the layer.Keywords
This publication has 19 references indexed in Scilit:
- Crystallographic tilting resulting from nucleation limited relaxationApplied Physics Letters, 1993
- Observation of the fractional quantum Hall effect in Si/SiGe heterostructuresApplied Physics Letters, 1992
- Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy systemApplied Physics Letters, 1992
- Mechanism and conditions for anomalous strain relaxation in graded thin films and superlatticesJournal of Applied Physics, 1992
- High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layerSemiconductor Science and Technology, 1992
- Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxyApplied Physics Letters, 1991
- Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substratesApplied Physics Letters, 1991
- Anomalous strain relaxation in SiGe thin films and superlatticesPhysical Review Letters, 1991
- Cooperative growth phenomena in silicon/germanium low-temperature epitaxyApplied Physics Letters, 1988
- X-ray double-crystal characterization of molecular beam epitaxially grown Si/Si1−xGex strained-layer superlatticesApplied Physics Letters, 1988