Low polarisation dependence (< 0.3 dB) in anEA modulatorusing a polyimide-buried high-mesa ridge structurewith an InGaAsP bulk absorption layer
- 2 February 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (3) , 237-238
- https://doi.org/10.1049/el:19950115
Abstract
The electroabsorption modulator combining a polyimide-buried high-mesa ridge structure with an InGaAsP bulk absorption layer which the authors have developed demonstrates an extremely low polarisation-dependent loss of less than 0.3 dB with a practical and sufficient attenuation of 20 dB.Keywords
This publication has 5 references indexed in Scilit:
- 20 Gbit/s transmission experiments using anintegrated MQW modulator/DFB laser moduleElectronics Letters, 1994
- 10 Gbit/s operation of polarisation insensitive, strained InGaAsP/InGaAsP MQW electroabsorption modulatorElectronics Letters, 1993
- Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitterJournal of Lightwave Technology, 1993
- New applications of a sinusoidally driven InGaAsP electroabsorption modulator to in-line optical gates with ASE noise reduction effectJournal of Lightwave Technology, 1992
- InGaAsP electroabsorption modulator for high-bit-rate EDFA systemIEEE Photonics Technology Letters, 1992