Pressure Dependence of the Resistance of VO2

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Abstract
The resistance of VO2 through the semiconductor‐to‐metal transition has been measured as a function of hydrostatic pressure. The transition has been studied in pure and partially hydrated single crystals of VO2 and in powdered VO2. The temperature of the transition is shifted by less than 0.5 C° by pressures up to 6×103 bars. The conductivity in both the semiconducting and metallic states is decreased by about 10—3%/bar. The effect of pressure on both the resistance and transition temperatures of VO2 is much smaller than that reported in previous measurements on V2O3. The relation between the pressure dependence of the energy gap in the semiconducting state and the pressure dependence of the transition temperature is examined and is shown to be consistent with Mott's mechanism for the transition to the metallic state.

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