Room-temperature continuous-wave operation of GaInN/GaNmultiquantum well laser diode
- 23 July 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (15) , 1494-1495
- https://doi.org/10.1049/el:19981063
Abstract
Continuous-wave operation at room temperature was demonstrated in a GaInN/GaN multiquantum well (MQW) laser grown by metal organic chemical vapour deposition (MOCVD) using a horizontal reactor. The laser structure was grown on a (0001) c-plane sapphire substrate. A 1 mm long cavity with a 4 µm wide ridge stripe was formed by cleaving along the (11-20) plane of the GaInN/GaN epitaxial layers. Stimulated emission was observed at a wavelength of 411 nm with a threshold current density of 11.7 kA/cm2.Keywords
This publication has 2 references indexed in Scilit:
- Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diodeElectronics Letters, 1998
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1997