Elevated temperature microwave characteristics of heterojunction bipolar transistors
- 30 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Temperature dependence of DC currents in HBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A new large signal model for heterojunction bipolar transistors including temperature effectsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Large signal modeling of HBT's including self-heating and transit time effectsIEEE Transactions on Microwave Theory and Techniques, 1992
- An analysis of the large-signal characteristics of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Microwave Theory and Techniques, 1992