An analysis of the large-signal characteristics of AlGaAs/GaAs heterojunction bipolar transistors

This publication has 21 references indexed in Scilit:

• Large-signal modeling and study of power saturation mechanisms in heterojunction bipolar transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• 5 W monolithic HBT amplifier for broadband X-band applications
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• A comparison of the GaAs MESFET and the AlGaAs/GaAs heterojunction bipolar transistor for power microwave amplification
  IEEE Transactions on Electron Devices, 1989
• GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications
  IEEE Transactions on Microwave Theory and Techniques, 1989
• Efficient large-signal FET parameter extraction using harmonics
  IEEE Transactions on Microwave Theory and Techniques, 1989
• A large-signal physical MESFET model for computer-aided design and its applications
  IEEE Transactions on Microwave Theory and Techniques, 1989
• State of the art and present trends in nonlinear microwave CAD techniques
  IEEE Transactions on Microwave Theory and Techniques, 1988
• Power Optimization of GaAs Implanted FET's Based on Large-Signal Modeling
  IEEE Transactions on Microwave Theory and Techniques, 1987
• Transistor design for low distortion at high frequencies
  IEEE Transactions on Electron Devices, 1976
• Modeling of bipolar transistor using integral charge-control model with application to third-order distortion studies
  IEEE Transactions on Electron Devices, 1972