A comparison of the GaAs MESFET and the AlGaAs/GaAs heterojunction bipolar transistor for power microwave amplification

Publisher Website

1 July 1989

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 36 (7) , 1274-1278
https://doi.org/10.1109/16.30932

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

High-efficiency 5-watt power amplifier with harmonic tuning
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
Bias dependence of GaAs and InP MESFET parameters
IEEE Transactions on Electron Devices, 1977
Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors
Published by Elsevier ,1975
Performance potential of high-frequency heterojunction transistors
IEEE Transactions on Electron Devices, 1970