Electrode Temperature Effect in Narrow-Gap Reactive Ion Etching
- 1 October 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (10R)
- https://doi.org/10.1143/jjap.32.4850
Abstract
The SiO2 etch characteristics were investigated using a narrow-gap reactive ion etching (RIE) apparatus. The etch rate was decreased and the selectivity to Si was increased when the upper electrode temperature was increased. However, the etch characteristics were independent of the absolute temperatures of the electrodes. This phenomenon can be explained in terms of the difference in the polymer deposition rate on walls that have different temperatures.Keywords
This publication has 4 references indexed in Scilit:
- Plasma Cleaning by Use of Hollow-Cathode Discharge in a CHF3-SiO2 Dry-Etching SystemJapanese Journal of Applied Physics, 1992
- High-selectivity plasma etching of silicon dioxide on single-wafer etchersJournal of Vacuum Science & Technology A, 1989
- Characterization of etching of silicon dioxide and photoresist in a fluorocarbon plasmaJournal of Vacuum Science & Technology B, 1988
- Plasma etching—A discussion of mechanismsJournal of Vacuum Science and Technology, 1979