RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach–Zehnder Modulator
- 25 July 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 20 (16) , 1384-1386
- https://doi.org/10.1109/LPT.2008.926831
Abstract
We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is achieved via the injection/depletion of electrons and holes in a p-i-n diode. The silicon MZM used in the experiment shows high phase-shift efficiency and a VpiLpi of 1.88times10-2Vldrcm which is nearly 350 times smaller than those of previously reported LiNbO3-based MZM. Also, a theoretical analysis of frequency doubling in the time domain shows good agreement with the experimental results.Keywords
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