Lpcvd of silicon oxide films in the temperature range 410 to 600°C from diacetoxyditertiarybutoxysilane
- 31 July 1986
- journal article
- Published by Elsevier in Materials Letters
- Vol. 4 (5-7) , 256-260
- https://doi.org/10.1016/0167-577x(86)90018-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Measurements of Temperature Dependent Stress of Silicon Oxide Films Prepared by a Variety of CVD MethodsJournal of the Electrochemical Society, 1985
- Photo‐CVD for VLSI IsolationJournal of the Electrochemical Society, 1984
- The step coverage of undoped and phosphorus-doped SiO2 glass filmsJournal of Vacuum Science & Technology B, 1983
- Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substratesJournal of Applied Physics, 1978
- Comparison of properties of dielectric films deposited by various methodsJournal of Vacuum Science and Technology, 1977
- Ueber das intermediäre Anhydrid von Kieselsäure und EssigsäureEuropean Journal of Organic Chemistry, 1868