Oxidation of SiC powder by high-temperature, high-pressure H2O
- 1 February 1986
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 1 (1) , 100-103
- https://doi.org/10.1557/jmr.1986.0100
Abstract
The reaction between SiC powder and H2O has been studied at 400°–800 °C under 10 and 100 MPa. Silicon carbide reacted with H2O to yield amorphous SiO2 and CH4 by the reaction SiC + 2H2O→SiO2 + CH4 above 500 °C. Cristobalite and tridymite crystallized from amorphous silica after the almost complete oxidation of SiC above 700 °C. The oxidation rate, as calculated from the weight gain, increased with temperature and pressure. The Arrhenius plotting of the reaction rate based on a Jander-type model gave apparent activation energies of 167–194 kJ/mol. Contrasted with oxidation in oxidative atmosphere, oxidation in H2O is characterized by the diffusion of H2O and CH4 in an amorphous silica layer where the diffusion seemed to be rate determining. Present results suggest that the oxidation of SiC includes the diffusion process of H2O in silica layers when atmospheres contain water vapor.Keywords
This publication has 8 references indexed in Scilit:
- Effect of Water Vapor on the Oxidation of Hot‐Pressed Silicon Nitride and Silicon CarbideJournal of the American Ceramic Society, 1976
- Hydroxyl Ion Diffusion in QuartzNature Physical Science, 1971
- Effects of Water Vapor on Oxidation of Silicon CarbideJournal of the American Ceramic Society, 1961
- Oxidation of Silicon CarbideJournal of the American Ceramic Society, 1959
- Oxidation of Silicon Carbide in the Temperature Range 1200 to 1500°The Journal of Physical Chemistry, 1959
- The Role of Steam, and the Effect of Colour and Polytype of the Crystal on the Oxidation of Silicon Carbide PowdersJournal of the Ceramic Association, Japan, 1959
- Oxidation Behavior of Silicon CarbideJournal of the American Ceramic Society, 1958
- A Study of the Oxidation of Pure Silicon-carbide PowdersJournal of the Ceramic Association, Japan, 1957