The effect of cross section on the electron states in quantum wire lasers
- 1 January 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (1) , 35-40
- https://doi.org/10.1088/0268-1242/9/1/007
Abstract
We consider the effects of the cross-sectional shape on the quantum confinement energies in quantum wire lasers that have been prepared by epitaxial overgrowth on V-grooved and other patterned substrates. Analytic solutions allow some key conclusions to be drawn, while numerical solutions allow a closer approximation to the actual shapes generated experimentally. We are able to obtain the effect of varying the shapes, not only on the ground states but also on the separation of the excited states that might be induced to lase experimentally.Keywords
This publication has 4 references indexed in Scilit:
- Invited paper. The poor prospects for one-dimensional devicesInternational Journal of Electronics, 1993
- Fabrication and optical properties of GaAs quantum wires and dots by MOCVD selective growthSemiconductor Science and Technology, 1993
- Fabrication of GaAs arrowhead-shaped quantum wires by metalorganic chemical vapor deposition selective growthApplied Physics Letters, 1993
- Two-dimensional quantum confinement in multiple quantum wire lasers grown by OMCVD on V-grooved substratesSurface Science, 1992