Carrier removal and changes in electrical properties of neutron irradiated GaAs
- 1 November 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (9) , 4931-4937
- https://doi.org/10.1063/1.349039
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Differential displacement kerma cross sections for neutron interactions in Si and GaAsIEEE Transactions on Nuclear Science, 1990
- Neutron/gamma induced damage mechanisms and synergistic effects in GaAs MESFETsIEEE Transactions on Nuclear Science, 1989
- Ion channeling study of damage in neutron irradiated GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Electron paramagnetic resonance spectroscopy of fast neutron-generated defects in GaAsJournal of Applied Physics, 1984
- Kinetics of formation of the midgap donor EL2 in neutron irradiated GaAs materialsJournal of Applied Physics, 1984
- Electron paramagnetic resonance determination of the generation rate of As antisites in fast neutron irradiated GaAsJournal of Applied Physics, 1983
- Deep level transient spectroscopy of neutron irradiated semiconductorsJournal of Nuclear Materials, 1982
- Electron spin resonance of AsGa antisite defects in fast neutron-irradiated GaAsApplied Physics Letters, 1982
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Disordered Regions in Semiconductors Bombarded by Fast NeutronsJournal of Applied Physics, 1959