Process dependent electrical characteristics and equivalent circuit model of sol-gel based PZT capacitors
- 1 July 1992
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 1 (2-4) , 269-291
- https://doi.org/10.1080/10584589208215717
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Ferroelectric switching, memory retention and endurance properties of very thin PZT filmsFerroelectrics, 1991
- Processing and characterization of sol-gel derived very thin film ferroelectric capacitorsFerroelectrics, 1991
- Charge motion in ferroelectric thin filmsFerroelectrics, 1991
- A circuit model for a thin film ferroelectric memory deviceFerroelectrics, 1991
- Fatigue and switching in ferroelectric memories: Theory and experimentJournal of Applied Physics, 1990
- Ferroelectric MemoriesScience, 1989
- Switching kinetics of lead zirconate titanate submicron thin-film memoriesJournal of Applied Physics, 1988
- Switching kinetics in KNO3 ferroelectric thin-film memoriesJournal of Applied Physics, 1987
- Note on Ferroelectric Domain SwitchingJournal of the Physics Society Japan, 1971
- Space Charge Layer Near the Surface of a FerroelectricPhysical Review B, 1955