High Electron Mobility InSb Films Prepared by Source-Temperature-Programed Evaporation Method
- 1 October 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (10) , 1365-1371
- https://doi.org/10.1143/jjap.10.1365
Abstract
InSb thin films are prepared by a source-temperature-programed evaporation method to reduce imperfections of crystal structure, and their crystalline and electrical properties are studied. An optimum source temperature program is investigated to obtain an appropriate source material composition. Films thus prepared has an electron mobility of 61,000 cm2/V·sec at room temperature and a donor concentration of 3.5×1015/cm3. An X-ray analysis of the film showes a high degree of stoichiometry.Keywords
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