‘SIMOX’ (Separation by Ion Implantation of Oxygen): a Technology for high-temperature silicon sensors
- 30 April 1990
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 23 (1-3) , 1003-1006
- https://doi.org/10.1016/0924-4247(90)87077-v
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- New conditions for synthesizing SOI structures by high dose oxygen implantationJournal of Crystal Growth, 1985
- Pattern Formation Resulting from Faceted Growth in Zone-Melted Thin FilmsPhysical Review Letters, 1985
- A graphical representation of the piezoresistance coefficients in siliconIEEE Transactions on Electron Devices, 1982