8.8 W CW power from broad-waveguide Al-free active-region(λ = 805 nm) diode lasers

28 May 1998

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 34 (11) , 1100-1101
https://doi.org/10.1049/el:19980775

Abstract

Al-free active-region (λ = 805 nm) diode lasers with 1 µm thick InGaP waveguide layers provide continuous wave powers as high as 8.8 W from 1.25 mm long devices with 4%/95% facet-coating reflectivities and 100 µm wide stripes. The transverse beam pattern is Gaussian-like with a 36° beamwidth and the series resistance is only 48 mΩ.

Keywords

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