Dark-line-resistant, aluminum-free diode laser at 0.8 mu m
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (12) , 1328-1330
- https://doi.org/10.1109/68.180565
Abstract
Quantum-well, lattice-matched InGaAsP lasers emitting at 0.8 mu m are shown to exhibit resistance toKeywords
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