Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well
- 1 May 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (5) , 409-411
- https://doi.org/10.1109/68.93861
Abstract
Quantum-well lasers emitting at 0.8 mu m and resistant toKeywords
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