Dark-line observations in failed quantum well lasers
- 18 April 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (16) , 1347-1348
- https://doi.org/10.1063/1.99640
Abstract
The electron-beam-induced current technique has been used to disclose dark-line patterns in degraded AlxGa1−xAs quantum well lasers. At least four distinct types of pattern exist, each being characteristic of a particular device structure.Keywords
This publication has 9 references indexed in Scilit:
- Dark line defect growth in optically pumped AlxGa1−xAs laser materialJournal of Applied Physics, 1985
- Bonding pad induced stresses in (Al,Ga)As double heterostructure lasersJournal of Applied Physics, 1983
- Defect structure of degraded Ga1−xAlxAs double-heterostructure light-emitting diodesJournal of Applied Physics, 1979
- Threshold for Optically Induced Dislocation Glide in GaAs-AlGaAs Double Heterostructures: Degradation via a New Cooperative Phenomenon?Physical Review Letters, 1978
- The new origin of dark-line defects in planar-stripe DH lasersIEEE Journal of Quantum Electronics, 1977
- Growth and propagation mechanism of 〈110〉-oriented dark-line defects in GaAs-Ga1−xAlxAs double heterostructure crystalsJournal of Applied Physics, 1977
- X-ray topographic observation of dark-line defects in GaAs-Ga1−xAlxAs double-heterostructure wafersApplied Physics Letters, 1976
- Degradation sources in GaAs-AlGaAs double-heterostructure lasersIEEE Journal of Quantum Electronics, 1975
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974