Dark line defect growth in optically pumped AlxGa1−xAs laser material
- 15 July 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (2) , 677-682
- https://doi.org/10.1063/1.336181
Abstract
The growth of dark line defects (DLD’s) has been observed in epitaxial AlGaAs wafers under optical pumping. The growth velocity as a function of optical intensity is given by V=AI1.8. In addition to recombination‐enhanced defect motion, stress‐induced dislocation glide is shown to contribute to the elongation of DLD’s in 〈100〉 and 〈110〉 directions. A climb mechanism may be responsible for the thickening of DLD’s after growth in 〈100〉 directions. The asymmetric growth of DLD’s between 〈110〉 and 〈11̄0〉 directions is attributed to the existence of α and β dislocations and the absence of 90° rotational symmetry in the zinc‐blende structure.This publication has 41 references indexed in Scilit:
- Bonding pad induced stresses in (Al,Ga)As double heterostructure lasersJournal of Applied Physics, 1983
- Threshold for Optically Induced Dislocation Glide in GaAs-AlGaAs Double Heterostructures: Degradation via a New Cooperative Phenomenon?Physical Review Letters, 1978
- The new origin of dark-line defects in planar-stripe DH lasersIEEE Journal of Quantum Electronics, 1977
- Growth and propagation mechanism of 〈110〉-oriented dark-line defects in GaAs-Ga1−xAlxAs double heterostructure crystalsJournal of Applied Physics, 1977
- Observation and analysis of very rapid optical degradation of GaAs/GaAlAs DH laser materialApplied Physics Letters, 1976
- Dark-line defects induced by mechanical bending in GaAs-Ga1−xAlxAs double-heterostructure wafersApplied Physics Letters, 1976
- X-ray topographic observation of dark-line defects in GaAs-Ga1−xAlxAs double-heterostructure wafersApplied Physics Letters, 1976
- Degradation sources in GaAs-AlGaAs double-heterostructure lasersIEEE Journal of Quantum Electronics, 1975
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973