A new planar-structure InAlGaAs-InAlAs superlattice avalanche photodiode with a Ti-implanted guard-ring
- 1 June 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (6) , 827-829
- https://doi.org/10.1109/68.502108
Abstract
High-speed quasi-planar-structure InAlGaAs-InAlAs superlattice avalanche photodiodes (SL-APDs) have been fabricated with a newly proposed Ti-implanted guard-ring. The APDs exhibited a uniform multiplication profile at a multiplication factor of 50 with no edge-multiplication. The dark current was 2.2 μA at a multiplication factor of 10. High-speed response characteristics were confirmed with a gain-bandwidth product of 110 GHz and a high cut-off frequency of 15 GHz, even at a low multiplication factor of 1.5. These characteristics are the first demonstration of planar-structure SL-APDs for 10 Gb/s optical receivers use.Keywords
This publication has 8 references indexed in Scilit:
- Reliability of mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodesIEEE Photonics Technology Letters, 1996
- 10-Gb/s strained MQW DFB-LD transmitter module and superlattice APD receiver module using GaAs MESFET IC'sJournal of Lightwave Technology, 1994
- High-sensitivity 10 Gbit/s optical receiver with superlattice APDElectronics Letters, 1993
- Thermally stable, buried high-resistance layers in p-type InP obtained by MeV energy Ti implantationJournal of Applied Physics, 1993
- High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth productIEEE Photonics Technology Letters, 1993
- Superlattice avalanche photodiode with a gain-bandwidth product larger than 100 GHz for very-high-speed systemsPublished by Optica Publishing Group ,1993
- InGaAsP/InAlAs superlattice avalanche photodiodeIEEE Journal of Quantum Electronics, 1992
- Multigigabit-per-second avalanche photodiode lightwave receiversJournal of Lightwave Technology, 1987