Thermally stable, buried high-resistance layers in p-type InP obtained by MeV energy Ti implantation

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Abstract
High‐energy Ti+ ions ranging from 1 to 5 MeV were implanted into p‐type InP:Zn (for two different zinc concentrations) at both room temperature and 200 °C. The range statistics for Ti implanted at various energies were calculated by analyzing the as‐implanted profiles determined by secondary‐ion mass spectrometry. Ti did not redistribute during post‐implantation annealing except for a slight indiffusion, irrespective of the implant or annealing temperatures used. This behavior is different from the behavior of other implanted transition metals (Fe and Co) in InP, which redistributed highly when the implants were performed at room temperature. In the MeV Ti‐implanted InP:Zn the background Zn showed a small degree of redistribution. Rutherford backscattering measurements showed a near virgin lattice perfection for 200 °C implants after annealing. Buried layers with intrinsic resistivity were obtained by MeV Ti implantation in InP:Zn (p=5×1016 cm−3).

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