MeV B compensation implants into n-type GaAs and InP
- 15 September 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (6) , 2179-2184
- https://doi.org/10.1063/1.351608
Abstract
High energy B implantations were performed into n‐type GaAs and InP at room temperature in the range of energies from 1 to 5 MeV and fluences from 1011 to 1016 cm−2. The material did not become amorphous for any of the fluences used. Buried layers with resistivities as high as 108 Ω cm and 106 Ω cm were obtained in GaAs and InP, respectively, after heat treatments. The breakdown voltages corresponding to the highest resistivities are 80 and 35 V, respectively, in GaAs and InP. In GaAs, the Rutherford backscattering analysis on the annealed samples showed an aligned yield close to that of a virgin sample, whereas, the yield in InP is more than that of the as‐implanted sample.This publication has 24 references indexed in Scilit:
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