0.4–3.0-MeV-range Be-ion implantations into InP:Fe

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Abstract
High-energy (MeV) Be implants in the energy range 0.4–3.0 MeV and dose range 2×1013–6×1014 cm−2 were performed in InP:Fe. Phosphorus coimplantation was used at all Be implant energies and doses to minimize Be redistribution during annealing. For comparison, the Be implant alone was also performed at 1 MeV for a dose of 2×1014 cm−2. The first four moments of the Be implant depth distributions were calculated from the secondary-ion-mass spectrometry (SIMS) data on the as-implanted samples. Variable temperature/time rapid thermal annealing (RTA) cycles were used to activate the Be implant. A maximum of 94% activation was obtained for 875 °C/15-s RTA on the 2-MeV/2×1014-cm−2 Be implant. In contrast to Be-implanted samples, no in-diffusion of Be was observed in Be/P-coimplanted samples. For the annealed samples, two additional Be peaks located at 0.8Rp and 0.9Rp (range) were observed in the SIMS depth profiles.

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