1800 V, 3.8 A bipolar junction transistors in 4H-SiC

Publisher Website

8 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/drc.2000.877120

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

High-voltage accumulation-layer UMOSFET's in 4H-SiC
IEEE Electron Device Letters, 1998
Vital Issues for SiC Power Devices
Materials Science Forum, 1998