MBE Growth of GaInAsSb/A1GaAsSb Double Heterostructures for Diode Lasers Emitting Beyond 2 μm

This publication has 8 references indexed in Scilit:

• Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm
  Applied Physics Letters, 1990
• Frequency-domain analysis of time-dependent reflection high-energy electron diffraction intensity data
  Journal of Vacuum Science & Technology B, 1990
• Structural Relaxation in Metastable Strained-Layer Semiconductors
  Annual Review of Materials Science, 1989
• Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm
  Soviet Journal of Quantum Electronics, 1988
• Room-temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy
  Applied Physics Letters, 1986
• Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range
  Journal of Electronic Materials, 1985
• Heterostructure Lasers
  Journal of the Electrochemical Society, 1979
• Molecular-beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
  Applied Physics Letters, 1977