New optical transitions in Si-Ge strained superlattices
- 31 August 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 59 (9) , 1022-1025
- https://doi.org/10.1103/physrevlett.59.1022
Abstract
Optical transitions in ultrathin Si-Ge strained superlattices are computed by means of a simple tight-binding model. The use of strain and folding arguments gives a clear understanding of the different origin of the transitions previously observed. The experimental dependence of intensities with the number of layers in the supercell is found to be a consequence of the fact that these superlattices are type II.Keywords
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