Study of oxygen effects in secondary ion energy distributions
- 1 June 1988
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 33 (1-4) , 523-525
- https://doi.org/10.1016/0168-583x(88)90621-0
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Chemical enhancement effects in SIMS analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Secondary ion and sputtered neutral formation from oxygen loaded Si(100)Journal of Vacuum Science & Technology A, 1985
- Secondary Ion Emission from Si Subjected to Oxygen Ion BombardmentJapanese Journal of Applied Physics, 1984
- The formation of Ta+ secondary ions at oxygen-covered Ta surfacesSurface Science, 1983
- Oxygen-concentration dependence of secondary ion yield enhancementSurface Science, 1981
- A sims study of the adsorption of oxygen on ion-bombarded silicon(111) surfacesApplications of Surface Science, 1980
- The sputtering process and sputtered ion emissionSurface Science, 1979
- Developments in secondary ion mass spectroscopy and applications to surface studiesSurface Science, 1975
- Comparative study of Si(111), silicon oxide, SiC and Si3N4 surfaces by secondary ion mass spectroscopy (SIMS)Thin Solid Films, 1975
- Secondary ion emission from silicon and silicon oxideSurface Science, 1975