Epitaxy of AIBIIIC2VI semiconductors
- 1 January 1988
- journal article
- review article
- Published by Wiley in Crystal Research and Technology
- Vol. 23 (1) , 3-16
- https://doi.org/10.1002/crat.2170230102
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- A. Christou and H. S. Rupprecht (eds). Gallium arsenide and related compounds 1987. Institute of Physics Conferences Series Number 91. Proceedings of the Fourteenth International Symposium on Gallium Arsenide and Related Compounds held in Heraklion, Crete 28. September—1. October 1987. Institute of Physics, Bristol and Philadelphia 1988, 834 Seiten, zahlreiche Abbildungen und Tabellen, Autorenindex, £ 55.00. ISBN 0–85498–182–9Crystal Research and Technology, 1988
- Thermische Zersetzung von CuInSe2, LiInSe2 und LiInTe2Journal of Thermal Analysis and Calorimetry, 1986
- Growth structure and optical properties of LixCu1−xInSe2 thin filmsThin Solid Films, 1986
- Heats and entropies of fusion of ABC2 chalcopyrite semiconductorsThermochimica Acta, 1984
- Growth, structure, and stoichiometry of epitaxial Cu‐III‐VI2 films on CaF2 substratesCrystal Research and Technology, 1984
- Structural and electrical properties of CuIn0.7Ga0.3Se2 epitaxial layers on GaAs substratesCrystal Research and Technology, 1980
- Epitaxial layers of CuInTe2 on GaAsCrystal Research and Technology, 1980
- Growth and electrical properties of epitaxial CuInS2 thin films on GaAs substratesCrystal Research and Technology, 1979
- Epitaxial layers of CuInSe2 on GaAsThin Solid Films, 1978
- The Reaction of Germanium with Aqueous SolutionsJournal of the Electrochemical Society, 1958