High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD
- 31 December 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 221 (1-4) , 679-682
- https://doi.org/10.1016/s0022-0248(00)00799-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor depositionApplied Physics Letters, 1997
- Optical losses of Al-free lasers for λ=0.808 and 0.98 μmApplied Physics Letters, 1996
- High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm RangeMRS Proceedings, 1996