Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition
- 27 January 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (4) , 443-445
- https://doi.org/10.1063/1.118176
Abstract
A compressively strained InAsSb/InAs multiple quantum-well (MQW) structure was grown by low-pressure metal-organic chemical vapor deposition. Maximum output power (from two facets) up to 1 W with differential efficiency about 70% was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.65 μm at 90 K in pulse mode operation. About 2 times lower threshold current density was obtained from the MQW lasers for a temperature range of 90 to 140 K compared to the double heterostructure lasers grown on the same growth conditions.Keywords
This publication has 7 references indexed in Scilit:
- Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1996
- High power InAsSb/InAsSbP double heterostructure laser for continuous wave operation at 3.6 μmApplied Physics Letters, 1996
- Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μmApplied Physics Letters, 1996
- InAsSb/InAlAsSb strained quantum-well diode lasers emitting at 3.9 μmApplied Physics Letters, 1995
- Analysis of differential gain in GaAs/AlGaAs quantum-well lasersJournal of Applied Physics, 1994
- Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasersIEEE Journal of Quantum Electronics, 1993
- Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloysSemiconductor Science and Technology, 1993