Optimization of n-doping in n-type a-SI:H/p-type textured c-Si heterojunction for photovoltaic applications
- 31 March 1999
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 57 (3) , 249-257
- https://doi.org/10.1016/s0927-0248(98)00176-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Characterization of intrinsic a-Si:H in p-i-n devices by capacitance measurements: Theory and experimentsJournal of Applied Physics, 1994
- Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)Japanese Journal of Applied Physics, 1992
- Hydrogenated Amorphous SiliconPublished by Cambridge University Press (CUP) ,1991
- Substitutional dopingPublished by Cambridge University Press (CUP) ,1991
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Band offsets and deep defect distribution in hydrogenated amorphous silicon-crystalline silicon heterostructuresApplied Physics Letters, 1989