Nature of deep defects in bulk VHF-GD a-Si:H
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 335-338
- https://doi.org/10.1016/s0022-3093(05)80124-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Recombination at correlated dangling bonds and the effects of Fermi level position on steady-state photoconductwiry in amorphous siliconPhilosophical Magazine Part B, 1991
- Theories of defects in amorphous semiconductorsJournal of Non-Crystalline Solids, 1987
- Capacitance studies of optical and thermal transitions from mobility gap states in hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1987
- Occupancy of dangling bond defects in doped hydrogenated amorphous siliconSolid State Communications, 1987
- High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequencyElectronics Letters, 1987
- Recombination at dangling bonds and steady-state photoconductivity ina-Si:HPhysical Review B, 1986
- The spectroscopy of localized statesPublished by Springer Nature ,1984
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982