Reduction of secondary defect formation in MeV B+ ion-implanted Si (100)
- 30 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (18) , 1838-1840
- https://doi.org/10.1063/1.102181
Abstract
MeV ion implantation in Si above a dose of 1014/cm2 leads to secondary defect formation in a buried layer, which is rather stable. Annealing of Si(100) implanted with 2.0 MeV B+ ions to a dose of 2.2×1014/cm2 has been investigated by means of cross‐sectional transmission electron microscopy. After annealing at 900 °C for 15 min, dislocation loops elongated along [110] were found. A remarkable decrease in secondary defect formation has been observed if, in addition, 140 keV Si+ was implanted prior to annealing.Keywords
This publication has 5 references indexed in Scilit:
- MeV-energy B+, P+ and As+ ion implantation into SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Depth distribution of secondary defects in 2-MeV boron-implanted siliconJournal of Applied Physics, 1986
- Formation of amorphous layers by ion implantationJournal of Applied Physics, 1985
- High energy ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Effect on electrical properties of segregation of implanted P+ at defect sites in SiApplied Physics Letters, 1980