Photoluminescence of a single InAs quantum dot molecule under applied electric field
- 5 February 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 65 (8) , 081303
- https://doi.org/10.1103/physrevb.65.081303
Abstract
We study the electronic coupling between two vertically stacked InAs quantum dots, which are embedded in the center of a structure. We use a microphotoluminescence setup to optically isolate a single quantum dot pair and measure the time-averaged photoluminescence under an applied vertical electric field. We find that field tunable coupling between excited states of the two quantum dots leads to charge transfer from one dot to the other. We model the spectra including simultaneously the field-dependent charge transfer and exciton capture rates, and the many-body spectra of the quantum dot molecule for different carrier configurations.
Keywords
All Related Versions
This publication has 27 references indexed in Scilit:
- Strain-engineered self-assembled semiconductor quantum dot latticesApplied Physics Letters, 2001
- Quantum Information Processing with Semiconductor MacroatomsPhysical Review Letters, 2000
- Single qubit from two coupled quantum dots: An approach to semiconductor quantum computationsPhysical Review A, 2000
- Spin interactions and switching in vertically tunnel-coupled quantum dotsPhysical Review B, 2000
- Hilbert-space structure of a solid-state quantum computer: Two-electron states of a double-quantum-dot artificial moleculePhysical Review A, 2000
- Quantum information and computationNature, 2000
- Quantum Information Processing Using Quantum Dot Spins and Cavity QEDPhysical Review Letters, 1999
- Feasibility study of the quantum XOR gate based on coupled asymmetric semiconductor quantum dotsSuperlattices and Microstructures, 1999
- Quantum computation with quantum dotsPhysical Review A, 1998
- Conditional Quantum Dynamics and Logic GatesPhysical Review Letters, 1995