Infrared excitation spectrum of thallium-doped silicon
- 15 August 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (4) , 294-295
- https://doi.org/10.1063/1.90343
Abstract
The excitation spectrum of thallium‐doped silicon has been measured in crystals doped to a level of 5×1016 Tl/cm3. The spectrum is characteristic of an effective‐mass‐like acceptor with an optical ionization energy of 0.246 meV. The peak optical cross section was estimated to be 2.6×10−17 cm2.Keywords
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