Electroreflectance and photoluminescence studies of InP epitaxial layers highly doped with selenium
- 15 September 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (6) , 496-498
- https://doi.org/10.1063/1.92772
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Transit time in the base region of drift transistors considering recombination and variable mobilitySolid-State Electronics, 1974
- Effective distribution coefficients of some group VI elements in indium phosphide grown by liquid phase epitaxySolid-State Electronics, 1974
- Linearized Third-Derivative Spectroscopy with Depletion-Barrier ModulationPhysical Review Letters, 1972
- Band Structure and High-Field Transport Properties of InPPhysical Review B, 1970