Piezoelectric Photoacoustic and Photoluminescence Properties of CuInXGa1-XSe2 Alloys
- 1 May 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (5S)
- https://doi.org/10.1143/jjap.38.3171
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Deep levels in ZnSe epitaxial layers examined by piezoelectric photoacoustic spectroscopyJournal of Crystal Growth, 1998
- The Performance of Cu(In, Ga)Se2-Based Solar Cells in Conventional and Concentrator ApplicationsMRS Proceedings, 1996
- Photoacoustic Spectra of Si Wafers at Liquid Helium TemperatureJapanese Journal of Applied Physics, 1995
- A Photoacoustic Study of CuInxGa1−xSe2 AlloysPhysica Status Solidi (a), 1992
- Photoacoustic spectroscopy of defect states in CuInSe2 single crystalsSolid State Communications, 1992
- Optical properties and band structure of the CuIn0.6Ga0.4Se2 alloyMaterials Letters, 1992
- Properties of CuIn1−xGaxSe2Solar Energy Materials and Solar Cells, 1992
- Dependence of Energy Gap on x in CuAlxGa1-xS2 Mixed Crystal SystemJapanese Journal of Applied Physics, 1988
- Band-gap narrowing in n-type CuInSe2 single crystalsSolid State Communications, 1986
- Crystal growth and properties of CuGaxIn1−xSe2 chalcopyrite compoundSolar Energy Materials, 1979