Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers
- 16 June 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (24) , 3212-3214
- https://doi.org/10.1063/1.119128
Abstract
We present calculations of the differential gain and threshold current densities for a 3.7 μm multiple quantum well structure consisting of a “well” composed of several periods of an InAs/InGaSb superlattice alternating with a quinternary alloy “barrier.” We find serious limitations to the optical properties of active regions composed of these multiple quantum wells, and propose a four-layer superlattice structure which corrects these problems.Keywords
This publication has 16 references indexed in Scilit:
- Type II mid-IR lasers operating above room temperatureElectronics Letters, 1996
- High CW power (>200 mW/facet) at 3.4 µmfrom InAsSb/InAlAsSb strained quantum well diode lasersElectronics Letters, 1996
- Room temperature mid-infrared quantum cascade lasersElectronics Letters, 1996
- Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μmApplied Physics Letters, 1996
- Generalized superlattice K·p theory and intersubband optical transitionsPhysical Review B, 1996
- Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimesJournal of Applied Physics, 1995
- Type-II quantum-well lasers for the mid-wavelength infraredApplied Physics Letters, 1995
- Demonstration of 3.5 µm Ga 1-
x
In
x
Sb/InAssuperlattice diodelaserElectronics Letters, 1995
- Quantum Cascade LaserScience, 1994
- The quaternary alloy system AlxGayIn1−x−ySbJournal of Applied Physics, 1981