High-speed switching of monolithic arrays of grating-surface-emitting diode lasers
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 7 (10) , 1520-1524
- https://doi.org/10.1109/50.39092
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Monolithic Phase-locked Arrays Of Semiconductor Diode LasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Two-dimensional coherent laser arrays using grating surface emissionIEEE Journal of Quantum Electronics, 1989
- Coherent, monolithic two-dimensional (10×10) laser arrays using grating surface emissionApplied Physics Letters, 1988
- Ultrafast switching characteristics of a bistable surface-emitting multiple quantum well distributed Bragg reflector laserApplied Physics Letters, 1988
- Semiconductor Quantum-Well Structures for Optoelectronics–Recent Advances and Future Prospects–Japanese Journal of Applied Physics, 1987
- Reduction of the spectral linewidth of semiconductor lasers with quantum wire effects—Spectral properties of GaAlAs double heterostructure lasers in high magnetic fieldsApplied Physics Letters, 1986
- Effect of fiber-far-end reflections on intensity and phase noise in InGaAsP semiconductor lasersApplied Physics Letters, 1984
- Q-switched semiconductor diode lasersIEEE Journal of Quantum Electronics, 1983
- Double-heterojunction laser diodes with multiply segmented contactsApplied Physics Letters, 1981
- Analysis of a proposed bistable injection laserSolid-State Electronics, 1964